| PART |
Description |
Maker |
| LDB211G9020C-001 LDB21906M20C-001 LDB21906M05C-001 |
Chip Multilayer Hybrid Baluns 1800 MHz - 2000 MHz RF TRANSFORMER
Chip Multilayer Hybrid Baluns 887 MHz - 925 MHz RF TRANSFORMER
Chip Multilayer Hybrid Baluns 800 MHz - 1000 MHz RF TRANSFORMER
Chip Multilayer Hybrid Baluns 1500 MHz - 1700 MHz RF TRANSFORMER
Chip Multilayer Hybrid Baluns 1600 MHz - 1800 MHz RF TRANSFORMER
|
Murata Manufacturing Co., Ltd.
|
| AN1L3N AN1L3N-T AN1L3N-T/JD AN1L3N-T/JM |
Hybrid transistor
on-chip resistor PNP silicon epitaxial transistor
|
NEC
|
| CE1N2R CE1N2R-T |
Hybrid transistor
on-chip resistor NPN silicon epitaxial transistor For mid-speed switching
|
NEC Electronics
NEC[NEC]
|
| CE2A3Q CE2A3Q-A CE2A3Q-T |
on-chip resistor NPN silicon epitaxial transistor For mid-speed switching
Hybrid transistor
TRANS DIGITAL BJT NPN 60V 2000MA 3SP-8
|
NEC Corp.
NEC[NEC]
NEC Electronics
|
| STC03DE170HV07 STC03DE170HV |
Hybrid emitter switched bipolar transistor ESBT 1700V - 3A - 0.33 }
Hybrid emitter switched bipolar transistor ESBT㈢ 1700V - 3A - 0.33 W
Hybrid emitter switched bipolar transistor ESBT庐 1700V - 3A - 0.33 W
Hybrid emitter switched bipolar transistor ESBT? 1700V - 3A - 0.33 W
|
ST Microelectronics
STMicroelectronics
|
| LDB211GXXXXC-XXX LDB181GXXXXC-XXX |
Chip Multilayer Hybrid Baluns
|
Murata Manufacturing
|
| LDB211G9010C-001 LDB212G4005C-001 LDB181G8405C-110 |
Chip Multilayer Hybrid Baluns
|
MURATA[Murata Manufacturing Co., Ltd.]
|
| GA1L3M GA1L3M-T2 GA1L3M-T1 |
Hybrid transistor
MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR
|
NEC[NEC]
|
| GN1L4M GN1L4M-T2 GN1L4M-T1 |
Hybrid transistor
MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR
|
NEC
|
| GA1A4P GA1A4P-T1 GA1A4P-T2 |
Hybrid transistor
MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR
|
NEC
|
| GN1A3Q GN1A3Q-T1 GN1A3Q-T2 |
Hybrid transistor
MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLD
|
NEC
|
